SiC Report: Inhaltsverzeichnis

Executive Summary

1 Technical Background
   1.1 Wide Bandgap Semiconductors
   1.1.1 Crystal Structures
   1.1.2 Properties of SiC
1.2 Wafer Processing
   1.2.1 Dopants
   1.2.2 Metallization / Contact Materials
   1.2.3 Characterisation
   1.2.4 Characterisation
   1.2.5 Component Fabrication
1.3 SiC Wafers
   1.3.1 Production
   1.3.2 Challenges
   1.3.3 Template substrates: SiC on Si
   1.3.4 Characteristics
1.4 Processes
   1.4.1 Physical Vapour Transport (PVT)
   1.4.2 Chemical Vapour Deposition (CVD)
   1.4.3 Liquid Phase Epitaxy (LPE)
   1.4.4 Metal Organic Vapour Phase Epitaxy (MOVPE)
   1.4.5 Molecular Beam Epitaxy (MBE)
1.5 Challenges
   1.5.1 Availability and cost issues for SiC wafers
   1.5.2 Crystal Defects
   1.5.3 P-type Doping
   1.5.4 Semi-insulating Wafers
   1.5.5 Reliability
   1.5.6 Packaging for High Temperature
   1.5.7 Ohmic Contacts
   1.5.8 Edge Termination
   1.5.9 Passivation
   1.5.10 Thick SiC Layers
   1.5.11 Modelling

2 Industry Overview
   2.1 Supply chain
   2.2 Key Players
   2.3 Wafer Manufacturers
   2.4 Device Manufacturers
         2.4.1 Diodes
         2.4.2 Transistors
         2.4.3 Sensors
   2.5 Roadmap

3 Markets for SiCWafers
   3.1 Markets for SiC Wafers, 2004–2009
   3.2 Price of SiCWafers in 2004–2009
   3.3 Components Grown on SiC Wafers
   3.4 Suppliers

4 SiC Components
4.1 Diodes
   4.1.1 Schottky diodes
   4.1.2 PiN Diodes
   4.1.3 IMPact Ionization Avalanche Transit Time (IMPATT) diodes
   4.1.4 Photodiodes
4.2 Transistors & Thyristors
   4.2.1 Metal Oxide Semiconductor Field Effect Transistors (MOSFET)
   4.2.2 Metal Semiconductor Field Effect Transistors (MESFET)
   4.2.3 Static Induction Transistors (SIT)
   4.2.4 Junction Field Effect Transistors (JFET)
   4.2.5 Bipolar Junction Transistors (BJT)
   4.2.6 Insulated Gate Bipolar Transistor (IGBT)
   4.2.7 Thyristors
4.3 Circuits
   4.3.1 Monolithic Microwave Integrated Circuits (MMIC)
   4.3.2 Power Amplifiers (PA)
   4.3.3 Mixers
   4.3.4 Other Circuits
4.4 Light-Emitting Diodes (LED)
4.5 Sensors & Micro Electro Mechanical Systems (MEMS)
   4.5.1 Ultra-Violet Photodetectors
   4.5.2 Gas Sensors
   4.5.3 Radiation Detectors
   4.5.4 Accelerometers
   4.5.5 Humidity Sensors
   4.5.6 Pressure Sensors

5 Applications & Markets for Power Supplies
5.1 Protection Circuits
   5.1.1 Power Factor Correction (PFC) circuits
   5.1.2 Snubber Circuits
5.2 IT, Telecom, Medical and Industrial Equipment
   5.2.1 Switch-mode Power Supplies (SMPS)
   5.2.2 Uninterruptible Power Supplies (UPS)
   5.2.3 DC-DC Converters
5.3 Motor Drives
   5.3.1 DC Motors
   5.3.2 AC Motors

6 Applications & Markets for High Temperature Electronics
6.1 Automotive
   6.1.1 Combustion Engines
   6.1.2 Exhaust Gas Sensors & Air-quality Sensors
   6.1.3 Power Conversion & Electrical Steering
   6.1.4 Electric Vehicles & Hybrid Electric Vehicles (HEV)
   6.1.5 Fuel Cell Vehicles (FCV)
6.2 Rail
6.3 Aerospace
   6.3.1 Engine Control
   6.3.2 All-electric Aircraft
6.4 Space
6.5 Power Transmission
   6.5.1 Flexible AC Transmission Systems (FACTS)
   6.5.2 High Voltage Direct Current (HVDC) systems
   6.6 Power Generation
   6.7 Well Logging

7 Applications & Markets for High-frequency / High-power Electronics
7.1 Base Stations for Wireless Networks
7.1.1 Current Technologies for Power Amplifiers
7.1.2 Third Generation Mobile Phone Networks
7.2 Radar
7.3 Satellite Repeaters
7.4 Military Telecommunication Systems
7.5 Television Stations
7.6 Microwave Ovens

8 Applications & Markets for Optoelectronics
8.1 Military Systems
8.1.1 Detection of Missile Launches
8.1.2 Non-line-of-sight Communications
8.2 Industrial Processes

Appendix

A Company Profiles
II-VI Semiconductors
Advanced Power Technology (APT)
Aixtron
Alenia Marconi Systems (AMS)
Astralux
Boston MicroSystems
Cree
Denso
Dow Corning
Dynex Semiconductor
Epigress
FLX Micro
Hitachi
Hoya Advanced Semiconductor Technologies
Infineon Technologies
Institut für Fügetechnik und Werkstoffprüfung (IFW)
Intrinsic Semiconductor
Kulite Semiconductor Products
Matsushita Electric Industrial
Mitsubishi Electric
Nippon Steel
Norstel
Northrop Grumman
Novasic
Philips Semiconductors
Rockwell Scientific Company (RSC)
Rohm
SemiSouth Laboratories
SiCED
SiCrystal
SiXON
STMicroelectronics
Technologies and Devices International (TDI)
Thales
Toshiba
Veeco Instruments
Other companies

Acronyms

Trade Information
Magazines
Conferences & Exhibitions

List of Tables

1.1 Material properties of GaN, SiC, AlN, diamond, Si and GaAs
1.2 SiC wafer production processes
2.1 Manufacturers of SiC wafers
2.2 Manufacturers of SiC components
3.1 World markets for SiC wafers in 2004–2009
3.2 Markets for 50, 75 and 100 mm SiC wafers in 2004–2009
3.3 Characteristics of 50 mm SiC wafers
3.4 Share of components grown on SiC wafers in 2004–2009
3.5 Manufacturers of SiC wafers
4.1 Markets for SiC Schottky diodes 2004–2009
4.2 Application markets for SiC Schottky diodes 2004–2009
4.3 Markets for SiC PiN diodes 2004–2009
4.4 Markets for SiC transistors 2004–2009
4.5 Markets for SiC MESFET 2004–2009
4.6 Markets for SiC SIT and JFET 2004–2009
4.7 Influence of transistor features on PA characteristics
4.8 Applications of UV sensing and some current technologies
4.9 Markets for SiC UV sensors 2004–2009
5.1 Market for SiC components in power supplies 2004–2009
5.2 Voltage changes in SMPS and step-down transformer
6.1 Component grades and operating temperature ranges
6.2 Applications and their temperature ranges
6.3 Electrical loads found on a car in 2005
6.4 Temperature hotspots in a car
7.1 Market for SiC components in RF applications 2004–2009
7.2 Requirements for a transistor in a WCDMA power amplifier
8.1 Market for SiC UV sensors 2004–2009
A.1 Companies related to the SiC market but not profiled in this report
B.1 Frequency bands and their applications